Fabrication and Characterization of Metal-Ferroelectric-Insulator-Semiconductor Capacitor Structure with Ferroelectric (Bi,Pr)(Fe,Mn)O₃ Thin Films (Special Issue : Solid State Devices and Materials)
スポンサーリンク
概要
- 論文の詳細を見る
- 2013-04-00
著者
-
Kawae Takeshi
Graduate School Of Natural Science And Technology Kanazawa University
-
Morimoto Akiharu
Graduate School Of Natural Science And Technology Kanazawa University
-
Seto Yuichiro
Graduate School of Natural Science and Technology, Kanazawa University, Kanazawa, Ishikawa 920-1192, Japan
関連論文
- Light-Intensity Dependence of Photocreated Defects in Hydrogenated Amorphous Silicon-Nitrogen Alloy Films
- Reduced Leakage Current and Ferroelectric Properties in Nd and Mn Codoped BiFeO3 Thin Films
- Influence of SrRuO3 Bottom Electrode Thickness on Electric Properties of (Bi,Pr)(Fe,Mn)O3 Ultra-Thin Film Capacitor
- Hysteresis Behavior of Capacitance–Voltage Curve in (Ba0.6Sr0.4)TiO3 Thick Films Caused by Strained Heterostructure
- Fabrication of BiFeO3 Thick Films by a Simple Liquid-Phase Epitaxial Growth Technique
- Composition dependence in BiFeO3 film capacitor with suppressed leakage current by Nd and Mn cosubstitution and their ferroelectric properties
- Fabrication of (Bi,Pr)(Fe,Mn)O Thin Films on Polycrystalline Diamond Substrates by Chemical Solution Deposition and Their Properties (Special Issue : Ferroelectric Materials and Their Applications)
- Optical Properties of BiFeO3-System Multiferroic Thin Films
- Structural Properties of Silicon Thin Films Prepared by Hot-Wire-Assisted Electron Cyclotron Resonance Chemical Vapor Deposition
- Fabrication and Characterization of Metal-Ferroelectric-Insulator-Semiconductor Capacitor Structure with Ferroelectric (Bi,Pr)(Fe,Mn)O₃ Thin Films (Special Issue : Solid State Devices and Materials)
- Light-Intensity Dependence of Photocreated Defects in Hydrogenated Amorphous Silicon–Nitrogen Alloy Films