Light-Intensity Dependence of Photocreated Defects in Hydrogenated Amorphous Silicon–Nitrogen Alloy Films
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概要
- 論文の詳細を見る
The photocreation of neutral dangling bonds in hydrogenated amorphous silicon obeys a relation of $G^{2/3}t^{1/3}$, where $G$ is the carrier generation rate and $t$ the illumination time. It is found in the present work that the $G$-dependence becomes prominently weak with an increase in the nitrogen content for hydrogenated amorphous silicon–nitrogen alloy films without an appreciable change in the $t$-dependence. No model of the photocreation of dangling bonds available to date can predict such a behavior.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-03-01
著者
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Kimura Susumu
Graduate School Of Natural Science And Technology Kanazawa University
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Shimada Masaki
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kanazawa University
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Morimoto Akiharu
Graduate School Of Natural Science And Technology Kanazawa University
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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Kumeda Minoru
Department of Electric and Electronic Engineering. Kanazawa University
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Kimura Susumu
Graduate School of Natural Science and Technology, Kanazawa University, 2-40-20 Kodatsuno, Kanazawa 920-8667, Japan
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Shimizu Tatsuo
Department of Electrical and Electronic Engineering, Faculty of Engineering, Kanazawa University, 2-40-20 Kodatsuno, Kanazawa 920-8667, Japan
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