Room Temperature Thermoelectric Properties of Epitaxially Grown Si-Ge Thin Films on SOI Substrates
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概要
- 論文の詳細を見る
- 2010-04-01
著者
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MATOBA Akinari
Graduate School of Natural Science & Technology, Kanazawa University
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SASAKI Kimihiro
Graduate School of Natural Science & Technology, Kanazawa University
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Matoba Akinari
Graduate School Of Natural Sci. & Technol. Kanazawa Univ.
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Matoba Akinari
Graduate School Of Natural Science & Technology Kanazawa University
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Sasaki Kimihiro
Graduate School Of Natural Sci. & Technol. Kanazawa Univ.
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Sasaki Kimihiro
Graduate School Of Natural Science & Technology Kanazawa University
関連論文
- Room Temperature Thermoelectric Properties of Epitaxially Grown Si-Ge Thin Films on SOI Substrates
- Structural Properties of Heavily B-Doped SiGe Thin Films for High Thermoelectric Power
- Anomalous Large Thermoelectric PoWer on Heavily B-Doped SiGe Thin Films with Thermal Annealing : Structure and Mechanical and Thermal Properties of Condensed Matter
- Investigation of Thermoelectric Properties of Si/Ge Multilayer with Ultra-Heavily B Doping
- Improved Dielectric Properties of Tetragonal ZrO2 Gate Dielectric Fabricated by Ozone-Assisted Sputtering
- Crystallinity and Thermoelectric Properties of Si/GeB Multilayers Prepared with Si Buffer Layer and SiO2 Substrates
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