The Measurement of Annealing Cycle Effect of Si–Ge–Au Amorphous Thin Film with Anomalously Large Thermoelectric Power by Using Photoacoustic Spectroscopy

概要

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Photoacoustic spectra of the Si–Ge–Au amorphous superlattice thin film have been measured as functions of annealing cycles. The Si–Ge–Au amorphous superlattice thin film was prepared by the alternating deposition of Si and heavily Au-doped Ge in ultrahigh vacuum. The Si–Ge–Au amorphous thin films show the anomalously high thermoelectric properties such as nondimensional figure of merit ZT $\sim$ 103. All prepared samples have intended artificial interval as deposited, but the superlattice structure is destroyed by diffusion even at 500 K with 15 min. annealing. Even after degradation of the superlattice structure, thermoelectric properties change slowly with repeated annealing cycles. Although there are no apparent differences in X-ray diffraction profiles for the amorphous thin film in this region of annealing cycles, we have successfully detected the apparent differences in photoacoustic spectra as a function of annealing cycle.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2003-05-15