Annealing Temperature Dependence of Crystallization Process of SiGeAu Thin Film

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概要

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• The large thermoelectric power of SiGeAu thin film depends on the sizes of microcrystals and the crystalline fraction of thin films. We investigate the crystallization process and control method of the microcrystal size and crystalline fraction. In the samples with 7 and 12 at. % Au, the crystallite diameter of Si1-xGex was constant when the annealing temperature was between 573–773 K and increased with 873 K annealing. These results suggest that there are two crystallization processes depending on annealing temperature: metal-induced crystallization (573–773 K) and liquid phase crystallization (873 K). The crystallite diameter increased with increasing Au composition and crystalline fraction increased with increasing annealing temperature. These new findings provide a strong hint to the control of the sizes of microcrystals and the crystalline fraction of thin films.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-11-25

著者

• Takiguchi Hiroaki

  Department Of Materials Science And Engineering National Defense Academy

• Okamoto Yoichi

  Department Of Applied Physics National Defense Academy

• Fukui Kazuto

  Department Of Internal Medicine National Health Insurance Organization Minamitama Hospital

• Okamoto Yoichi

  Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239-8686, Japan

• Takiguchi Hiroaki

  Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239-8686, Japan

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