Spectral Analysis of Deep Level Transient Spectroscopy (SADLTS)
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-10-20
著者
-
Fudamoto Michihiro
Department Of Materials Science And Engineering The National Defense Academy
-
Kato S
Tokyo Inst. Technol. Tokyo Jpn
-
Fudamoto Michihiro
The National Defense Academy Department Of Applied Physics
-
MORIMOTO Jun
The National Defense Academy, Department of Applied Physics
-
MIYAKAWA Toru
The National Defense Academy, Department of Applied Physics
-
TAHIRA Kenichiro
The National Defense Academy, Department of Applied Physics
-
KIDA Tatsuo
The National Defense Academy, Department of Applied Physics
-
KATO Seiji
The National Defense Academy, Department of Applied Physics
-
MIYAKAWA Toru
Dept. of Materials Science and Engineering, National Defense Academy
-
Miyakawa T
Dept. Of Materials Science And Engineering National Defense Academy
-
Morimoto Jun
The National Defense Academy Department Of Materials Science And Engineering
-
Kida Tatsuo
The National Defense Academy Department Of Applied Physics
-
Miyakawa Toru
The National Defense Academy D Epartment Of Materials Science And Engineering
-
Kato Seiji
The National Defense Academy Department Of Applied Physics
関連論文
- Spectral Analysis of Deep Level Transient Spectorscopy (SADLTS) of Deep Centers in CdTe Single Crystals : Electrical Properties of Condensed Matter
- Multiexponential and Spectral Analysis of Carrier Emission Processes from Co-Related Deep Levels in p-Silicon
- Spectral Analysis of Deep Level Transient Spectroscopy (SADLTS) of DX-centers in Al_xGa_As:Sn : Electrical Properties of Condensed Matter
- Spectral Analysis of Deep Level Transient Spectroscopy (SADLTS)
- Thermoelectric Characteristics of Sintered SiC/Cu Semiconductors
- Size Effects on Photoacoustic Spectra for GaAs Fine Powder
- AC Measurement of Seebeck Coefficient in Disk-Shaped Semiconductors Using CW-Lasers
- Excitation Spectrum of 3.39 μm Tansmission Modulation by Tunable CW-CO_2 Laser in p-Ge
- Theory of CW-Laser-Induced Dynamic Grating by Inter-Valence-Band Absorption in p-Type Semiconductors
- CW-Laser Induced Dynamic Grating and Subpicosecond Hole Relaxation Time in p-Ge
- Deep Trap Measurement in Hg_Cd_xTe by Isothermal Capacitance and Deep-Level Transient Spectroscopy
- Improvement of Signal-to-Noise Ratio in Microphone Photoacoustic Spectroscopy
- Photoacoustic Spectroscopy Detected by Piezoelectric Transducer with Resonator : Photoacoustic Spectroscopy
- Photoacoustic Spectra for Porous Silicon Using Piezoelectric Transducer and Microphone
- Chopping Frequency Dependence of Photoacoustic Spectrum in Porous Silicon
- Amplitude and Phase Signals of the Photothermal Deflection Images
- Thermoelectric Properties of and Dopant Distribution in SiC Thin Films
- Photoacoustic Spectrum and Surface Morphology of Porous Silicon
- Band Gap of Porous Silicon Estimated by Photoacoustic Spectra
- ポリシラスチレンにより密度制御したSiC/Cu系の熱電特性
- 交流法によるSiC/Cuのゼーベック係数及び熱伝導率の測定
- Deep Impurity Centers in CdS Single Crystals Studied by Spectral Analysis of Deep Level Transient Spectroscopy
- Photoacoustic Spectroscopy of Cu_xS/CdS Heterojunction
- Thermal Diffusivity of Semiconductors Evaluated by Differential PPE Method : Physical Acoustics
- Vanadium-Related Deep Levels in n-Silicon Detected by Junction Capacitance Waveform Analysis
- Pulsed Photoacoustic Effect in Semiconductors : Photoacoustic Effect and Spectroscopy
- Secondary Photoacoustic Spectra of CdS: Cu by Gas-microphone Method : Photoacoustic Spectroscopy
- Distribution of Deep Level Parameters in Spectral Analysis of DLTS (SADLTS) : Electrical Properties of Condensed Matter
- Non-Linear Characteristics of Infrared Photoacoustic Signal in p-Ge : Photoacoustic Spectroscopy
- Double-Peak Emission Rate Spectrum of DX-Centers in AlxGa1-xAs
- Double-Peak Emission Rate Spectrum of DX-Centers in AlxGa1-xAs