Identification of the Particle Source in LSI Manufacturing Process Equipment (Special Issue on Quarter Micron Si Device and Process Technologies)

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概要

• 論文の詳細を見る

• Today, defect sources of LSI device mainly lie in the process equipments. The particles generating in these equipments are introduced onto the wafer, and form the defects resulting in functional failures of LSI device. Thus, reducing these particles is acquired for increasing production yield and higher productivity, and it is important to identify the particle source in the equipment. In this study, we discussed new two methods to identify this source in the equipment used in the production line. The important point of identifing is to estimate the particle generation with short time and high accuracy, and to minimize long time stop of the equipment requiring disassembly. First, we illustrated "particle distribution analysis method." In this method, we showed the procedure to express the particle distribution mathematically. We applied this method to our etching equipment, and could identify the particle source without stopping this etching equipment. Secondly, we illustrated the method of "in-situ particle monitoring method," and applied this method to our AP-CVD equipment. As a result, it was clear the main particle source of this equipment and the procedure for decreasing these particles. By using this method, we could estimate the particle generation at real time in process without stopping this equipment. Thus, both methods shown in this study could estimate the particle generation and identify the particle source with short time and high accuracy. Furthermore, they do not require long time stop of the process equipment and interrupting the production line. Therefore, these methods are concluded to be very useful and effective in LSI manufacturing process.

• 社団法人電子情報通信学会の論文
• 1994-03-25

著者

• Aoi N

  Matsushita Electric Industrial Co. Ltd. Osaka Jpn

• Aoi Nobuo

  Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.

• HIROFUJI Yuichi

  Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.

• Hirofuji Y

  Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.

• Hirofuji Yuichi

  Semiconductor Reseach Center Matsushita Electric Industrial Co. Ltd.

• Takii Yoshimasa

  Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.

• Takii Yoshimasa

  Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.

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• Novel Porous Films Having Low Dielectric Constants Synthesized by a Liquid Phase Silylation of Spin-On Glass Sol for Intermetal Dielectrics
• Identification of the Particle Source in LSI Manufacturing Process Equipment (Special Issue on Quarter Micron Si Device and Process Technologies)
• Low-Energy Double-Ion -Beam Deposition System
• PIG-Type Compact Microwave Metal Ion Source
• Electrochemical Analysis for Corrosion Mechanism of Al-Cu Alloy Thin-Films
• Novel Porous Films Having Low Dielectric Constants Synthesized by Liquid Phase Silylation of Spin-On Glass Sol for Intermetal Dielectrics

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