Nitrogen Ion Implantation and Thermal Annealing in SiC Single Crystal
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概要
- 論文の詳細を見る
- 1995-08-21
著者
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原 一広
「応用物理」編集委員会
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Hara Kunihiko
Research & Development Department Nippondenso Co. Ltd.
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FUKUMOTO Atsushi
OD Laboratory, Giga-Byte Laboratories, Sony Corporation
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Tokura N
Research Laboratories Nippondenso Co. Ltd.
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Tokura Norihito
Research And Development Dept. Nippondenso Co. Ltd.
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Miyajima Takeshi
Research Laboratories Nippondenso Co. Ltd.
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Fukumoto A
Sony Corp. Tokyo Jpn
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Fukumoto Atsuo
Toyota Central Research & Development Laboratories, Inc., 41-1 Aza-Yokomichi, Oaza-Nagakute,
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Hayashi Hidemitsu
Toyota Central Research & Development Laboratories, Inc., 41-1 Aza-Yokomichi, Oaza-Nagakute,
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Fukumoto A
Toyota Central Research & Development Laboratories Inc.
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Hayashi H
Kobe Steel Ltd. Hyogo Jpn
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