WATANABE Yoshio | NTT Basic Research Laboratories

スポンサーリンク

概要

関連著者

もっと見る

著作論文

Epitaxy, Modification of Electronic Structures, Overlayer-Substrate Reaction and Segregation in Ferromagnetic Co Films on Se-Treated GaAs(001) Surface
Resonant Photoemission Spectroscopy of Ga 3d Two-Hole State of GaAs : Condensed Matter: Electronic Properties, etc.
Stoichiometry Study of S-Terminated GaAs(001)-(2×6)Surface with Synchrotron Radiation Photoelectron Spectoscopy
GaSb(001) 4 × 2-In Surface Structure Studied by Core-Level Photoelectron Spectroscopy and X-Ray Standing-Wave Analysis
Real-Time Observation of Fractional-Order X-ray Reflection Profiles of InP(001) During Step-Flow Growth
Throughput Measurement of a Multilayer-Coated Schwarzschild Objective Using Synchrotron Radiation
Growth of Twinned Epitaxial Layers on Si(111)√ × √-B Studied by Low-Energy Electron Microscopy
Diffusion Barrier Mechanism of Extremely Thin Tungsten Silicon Nitride Film Formed by ECR Plasma Nitridation
Enhanced Water-Window X-Ray Pulse Generation from Femtosecond-Laser-Produced Plasma with a Carbon Nanotube Target
Work Function Changes of GaAs Surfaces Induced by Se treatment
Detection of a Transition Layer near the External Surface of Thermally-Grown Silicon Oxides
Real-Time Observation of Fractional-Order X-ray Reflection Profiles of InP(001) During Step-Flow Growth
Growth of Twinned Epitaxial Layers on Si(111)$\sqrt{3}\times\sqrt{3}$-B Studied by Low-Energy Electron Microscopy

もっと見る

スポンサーリンク