HOMMA Yoshikazu | NTT Interdisciplinary Research Laboratories
スポンサーリンク
概要
関連著者
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HOMMA Yoshikazu
NTT Interdisciplinary Research Laboratories
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Homma Yoshikazu
NTT Interdisciplinary Labs., Midori-cho, Musashino 180, Japan
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Homma Y
Ntt Interdisciplinary Res. Lab. Tokyo Jpn
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HOMMA Yoshikazu
NTT Basic Research Laboratories
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Inoue N
National Defense Acad. Yokosuka Jpn
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Inoue N
Oki Electric Ind. Co. Ltd. Tokyo Jpn
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OGINO Toshio
NTT Basic Research Laboratories
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SAITO Kazuyuki
the University of Aizu
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YABUMOTO Norikuni
NTT Interdisciplinary Labs.
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Osaka J
Ntt Photonics Lab. Atsugi Jpn
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Inoue Naohisa
Ntt Lsi Laboratories
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OSAKA Jiro
NTT LSI Laboratories
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HIBINO Hiroki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
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Hibino H
Ntt Basic Res. Lab. Kanagawa Jpn
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Hibino Hiroki
Ntt Basic Research Laboratories
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Maruo T
Ntt Interdisciplinary Research Laboratories
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SATO Yoshiyuki
NTT LSI Laboratories
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HIGASHI Yasuhiro
NTT Interdisciplinary Research Laboratories
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MARUO Tetsuya
NTT Interdisciplinary Research Laboratories
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TANAKA Tohru
NTT Interdisciplinary Research Laboratories
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Saito K
Nec Corp. Kanagawa Jpn
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Ogino T
Ntt Basic Research Laboratories
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AIZAWA Noriyuki
Tokyo Gakugei University
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Homma Y
Ntt Sci. And Core Technol. Lab. Group Kanagawa Jpn
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YAMAWAKI Masataka
NTT Interdisciplinary Research Laboratories
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IGO Azusa
NTT Advanced Technology
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OCHIAI Shota
NTT Advanced Technology
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Sato Yoshiyuki
Ntt Laboratories
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Aizawa N
Tokyo Gakugei University
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Yabumoto Norikuni
NTT Interdisciplinary Labs., Midori-cho, Musashino 180, Japan
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Saito Kazuyuki
The University of Aizu, Ikki-machi, Aizu-Wakamatsu 965-80, Japan
著作論文
- Depth Profiling of As in an AlAs/GaAs Multilayer by a New Laser-Induced Sputtered Neutral Mass Spectrometry System
- Application of Thermal Desorption Spectroscopy to the Study of Defects Induced by Arsenic Implantation
- In Situ Observation of Surface Morphology Evolution Corresponding to Reflection High-Energy Electron Diffraction Oscillation during Molecular Beam Epitaxy of Gallium Arsenide
- Patterning-Assisted Control for Ordered Arrangement of Atomic Steps on Si(111) Surfaces
- In Situ Observation of Monolayer Steps during Molecular Beam Epitaxy of Gallium Arsenide by Scanning Electron Microscopy
- Ultra-Large-Scale Step-Free Terraces Formed at the Bottom of Craters on Vicinal Si(111) Surfaces
- Stability of Relative Sensitivity Factors in Secondary Ion Mass Spectrometry
- Application of Thermal Desorption Spectroscopy to the Study of Defects Induced by Arsenic Implantation