Depth Profiling of As in an AlAs/GaAs Multilayer by a New Laser-Induced Sputtered Neutral Mass Spectrometry System

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Single-Walled Carbon Nanotube Growth on Silicon Substrates Using Nanoparticle Catalysts : Instrumentation, Measurement, and Fabrication Technology
Control of island formation on silicon surfaces using ultra-high-vacuum scanning electron microscopy
Depth Profiling of As in an AlAs/GaAs Multilayer by a New Laser-Induced Sputtered Neutral Mass Spectrometry System
Application of Thermal Desorption Spectroscopy to the Study of Defects Induced by Arsenic Implantation
Low-Acceleration-Voltage Electron Irradiation Damage in Single-Walled Carbon Nanotubes
Observation of Incomplete Surface Melting of Si Using Medium-Energy Ion Scattering Spectroscopy
In Situ Observation of Surface Morphology Evolution Corresponding to Reflection High-Energy Electron Diffraction Oscillation during Molecular Beam Epitaxy of Gallium Arsenide
Patterning-Assisted Control for Ordered Arrangement of Atomic Steps on Si(111) Surfaces
In Situ Observation of Monolayer Steps during Molecular Beam Epitaxy of Gallium Arsenide by Scanning Electron Microscopy
Ultra-Large-Scale Step-Free Terraces Formed at the Bottom of Craters on Vicinal Si(111) Surfaces
Stability of Relative Sensitivity Factors in Secondary Ion Mass Spectrometry
Quantitative Analysis Using Secondary Ion Mass Spectrometry
Drastic Improvement in Surface Flatness Properties by Using GaAs (111) A Substrates in Molecular Beam Epitaxy
Application of Thermal Desorption Spectroscopy to the Study of Defects Induced by Arsenic Implantation
Low-Acceleration-Voltage Electron Irradiation Damage in Single-Walled Carbon Nanotubes
Stiffness of Step Bunches on Si(111)

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