Homma Yoshikazu | NTT Interdisciplinary Labs., Midori-cho, Musashino 180, Japan

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概要

• Homma Yoshikazuの詳細を見る
• 同名の論文著者
• NTT Interdisciplinary Labs., Midori-cho, Musashino 180, Japanの論文著者

関連著者

• HOMMA Yoshikazu

  NTT Interdisciplinary Research Laboratories

• Homma Yoshikazu

  NTT Interdisciplinary Labs., Midori-cho, Musashino 180, Japan

• Homma Y

  Ntt Interdisciplinary Res. Lab. Tokyo Jpn

• HOMMA Yoshikazu

  NTT Basic Research Laboratories

• Inoue N

  National Defense Acad. Yokosuka Jpn

• Inoue N

  Oki Electric Ind. Co. Ltd. Tokyo Jpn

• OGINO Toshio

  NTT Basic Research Laboratories

• Osaka J

  Ntt Photonics Lab. Atsugi Jpn

• Inoue Naohisa

  Ntt Lsi Laboratories

• OSAKA Jiro

  NTT LSI Laboratories

• HIBINO Hiroki

  NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation

• Hibino H

  Ntt Basic Res. Lab. Kanagawa Jpn

• Hibino Hiroki

  Ntt Basic Research Laboratories

• Maruo T

  Ntt Interdisciplinary Research Laboratories

• SAITO Kazuyuki

  the University of Aizu

• HIGASHI Yasuhiro

  NTT Interdisciplinary Research Laboratories

• MARUO Tetsuya

  NTT Interdisciplinary Research Laboratories

• TANAKA Tohru

  NTT Interdisciplinary Research Laboratories

• YABUMOTO Norikuni

  NTT Interdisciplinary Labs.

• Ogino T

  Ntt Basic Research Laboratories

• AIZAWA Noriyuki

  Tokyo Gakugei University

• Sato Yoshiyuki

  Ntt Laboratories

• Aizawa N

  Tokyo Gakugei University

• Yabumoto Norikuni

  NTT Interdisciplinary Labs., Midori-cho, Musashino 180, Japan

• Saito Kazuyuki

  The University of Aizu, Ikki-machi, Aizu-Wakamatsu 965-80, Japan

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著作論文

• Depth Profiling of As in an AlAs/GaAs Multilayer by a New Laser-Induced Sputtered Neutral Mass Spectrometry System
• In Situ Observation of Surface Morphology Evolution Corresponding to Reflection High-Energy Electron Diffraction Oscillation during Molecular Beam Epitaxy of Gallium Arsenide
• Patterning-Assisted Control for Ordered Arrangement of Atomic Steps on Si(111) Surfaces
• In Situ Observation of Monolayer Steps during Molecular Beam Epitaxy of Gallium Arsenide by Scanning Electron Microscopy
• Ultra-Large-Scale Step-Free Terraces Formed at the Bottom of Craters on Vicinal Si(111) Surfaces
• Application of Thermal Desorption Spectroscopy to the Study of Defects Induced by Arsenic Implantation

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