Stability of Carbon Incorpoated Semipolar GaN($1\bar{1}01$) Surface

スポンサーリンク

概要

• 論文の詳細を見る

• The structural stability of carbon incorporated GaN($1\bar{1}01$) surfaces is theoretically investigated by performing first-principles pseudopotential calculations. The calculated surface formation energies taking account of the metal organic vapor phase epitaxy conditions demonstrate that several carbon incorporated surfaces are stabilized depending on the growth conditions. Using surface phase diagrams, which are obtained by comparing the calculated adsorption energy with vapor-phase chemical potentials, we find that the semipolar surface forms NH₂ and CH₂ below ${\sim}1660$ K while the polar GaN(0001) surface with CH₃ is stabilized below ${\sim}1550$ K. This difference could be one of possible explanations for p-type doping on the semipolar GaN($1\bar{1}01$) surface.

• 2011-08-25

著者

• Akiyama Toru

  Department Of Orthopaedic Surgery Faculty Of Medicine The University Of Tokyo

• Nakamura Kohji

  Department Of Dermatology Hiroshima University School Of Medicine

• Ito Tomonori

  Department Of Chemical And Biochemical Engineering Faculty Of Engineering Toyama University

• Ito Tomonori

  Department of Physics Engineering, Mie University, Tsu 514-8507, Japan

• Nakamura Kohji

  Department of Physics Engineering, Mie University, Tsu 514-8507, Japan

関連論文

• Juxtacortical chondroma of the sacrum
• Empirical Potential Approach to the Formation of 3C-SiC/Si(110)
• An Empirical Potential Approach to Wurtzite-Zinc-Blende Polytypism in Group III-V Semiconductor Nanowires
• Theoretical Study of Excess Si Emitted from Si-oxide/Si Interfaces
• Electrolyte-promoted Easy Separation of Suspended TiO_2 Particles with a Solids Retaining Type Centrifuge in Combination with Photoreactor to Degrade Dibutyl Phthalate
• A TiO_2-Suspended Continuous Flow Photoreactor System Combined with the Separation of TiO_2 Particles by Coagulation for the Photocatalytic Degradation of Dibutyl Phthalate
• Production of tissue inhibitor of metalloproteinase-1 and -2 by cultured keratinocytes
• Stability of Carbon Incorpoated Semipolar GaN($1\bar{1}01$) Surface
• Stable Microstructures on a GaAs(111)A Surface : the Smallest Unit for Epitaxial Growth
• Stability and Indium Incorporation Processes on In0.25Ga0.75N Surfaces under Growth Conditions: First-Principles Calculations
• Reconstructions on AlN Polar Surfaces under Hydrogen Rich Conditions
• Sugar consumption and ethanol fermentation by transporter-overexpressed xylose-metabolizing Saccharomyces cerevisiae harboring a xyloseisomerase pathway(BIOCHEMICAL ENGINEERING)
• Reconstructions on AlN Nonpolar Surfaces in the Presence of Hydrogen
• Theoretical Investigation of Oxygen Diffusion in Compressively Strained High-Density $ \alpha $-Quartz
• Ab initio-Based Study for Adatom Kinetics on Semipolar GaN($11\bar{2}2$) Surfaces
• First-Principles Analyses of O2 Molecules around Ultrathin SiO2/Si(100) Interface
• Reconstructions of GaN and InN Semipolar ($10\bar{1}\bar{1}$) Surfaces
• Surface Reconstructions on GaN and InN Semipolar ($11\bar{2}2$) Surfaces
• Stress Dependence of Oxidation Reaction at SiO2/Si Interfaces during Silicon Thermal Oxidation
• Influence of Lattice Constraint from InN and GaN Substrate on Relationship between Solid Composition of InxGa1-xN Film and Input Mole Ratio during Molecular Beam Epitaxy
• An Empirical Interatomic Potential Approach to Structural Stability of ZnS and ZnSe Nanowires
• Effects of Facet Orientation on Relative Stability between Zinc Blende and Wurtzite Structures in Group III–V Nanowires
• Oxygen Trap Hypothesis in Silicon Oxide
• Theoretical Investigation of Effect of Side Facets on Adsorption--Desorption Behaviors of In and P Atoms at Top Layers in InP Nanowires
• AlN Grown on a- and n-Plane Sapphire Substrates by Low-Pressure Hydride Vapor Phase Epitaxy
• Transport Mechanism of Interfacial Network Forming Atoms during Silicon Oxidation
• Sugar consumption and ethanol fermentation by transporter-overexpressed xylose-metabolizing Saccharomyces cerevisiae harboring a xyloseisomerase pathway
• AlN Grown on a- and n-Plane Sapphire Substrates by Low-Pressure Hydride Vapor Phase Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)
• Simple Systematization of Structural Stability for ANB8-N Compounds
• Stability of Magnesium-Incorporated Semipolar GaN($10\bar{1}\bar{1}$) Surfaces
• Surface Reconstructions on GaN and InN Semipolar ($20\bar{2}1$) Surfaces
• Neoadjuvant and adjuvant chemotherapy with modified mesna, adriamycin, ifosfamide, and dacarbazine (MAID) regimen for adult high-grade non-small round cell soft tissue sarcomas

もっと見る 閉じる

スポンサーリンク