Surface Reconstructions on GaN and InN Semipolar ($20\bar{2}1$) Surfaces
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概要
- 論文の詳細を見る
The reconstructions on semipolar GaN($20\bar{2}1$) and InN($20\bar{2}1$) surfaces are investigated on the basis of first-principles total-energy calculations. The surface formation energy clarifies that there are several reconstructions depending on the growth conditions. For GaN, the surface where topmost N atoms are desorbed is stable under N-rich conditions, whereas a metallic reconstruction with a Ga adlayer is stabilized under Ga-rich conditions. For InN, in contrast, the surface with an In adlayer is favorable regardless of the growth conditions. We also provide immediate access to the atomic structures of semipolar ($20\bar{2}1$) surfaces under realistic growth conditions using surface phase diagrams.
- The Japan Society of Applied Physicsの論文
- 2010-01-25
著者
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Akiyama Toru
Department Of Orthopaedic Surgery Faculty Of Medicine The University Of Tokyo
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Nakamura Kohji
Department Of Dermatology Hiroshima University School Of Medicine
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Ito Tomonori
Department Of Chemical And Biochemical Engineering Faculty Of Engineering Toyama University
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Yamashita Tomoki
Department of Physics Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan
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