Reconstructions of GaN and InN Semipolar ($10\bar{1}\bar{1}$) Surfaces

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概要

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• We report a systematic and comprehensive investigation of reconstructions of semipolar GaN($10\bar{1}\bar{1}$) and InN($10\bar{1}\bar{1}$) surfaces by first-principles total-energy calculations. The surface formation energy indicates that there are several reconstructions depending on the growth conditions: The $1{\times}2$ surface consisting of a single Ga–Ga dimer and Ga vacancies is stable under N-rich conditions, whereas metallic reconstructions are favorable under Ga-rich (In-rich) conditions. We also characterize atomic structures of semipolar surfaces under realistic growth conditions using surface phase diagrams. For InN, the analysis of density of states predicts charge accumulations on semipolar surfaces.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-10-25

著者

• Akiyama Toru

  Department Of Orthopaedic Surgery Faculty Of Medicine The University Of Tokyo

• Nakamura Kohji

  Department Of Dermatology Hiroshima University School Of Medicine

• Ito Tomonori

  Department Of Chemical And Biochemical Engineering Faculty Of Engineering Toyama University

• Ammi Daisuke

  Department of Physics Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan

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