Surface Reconstructions on GaN and InN Semipolar ($11\bar{2}2$) Surfaces

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概要

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• The reconstructions on semipolar GaN($11\bar{2}2$) and InN($11\bar{2}2$) surfaces are systematically investigated on the basis of first-principles total-energy calculations. The surface formation energy clarifies that there are several reconstructions depending on the growth conditions: The surface with a Ga adatom is stable under N-rich conditions, whereas metallic reconstructions are favorable under Ga-rich (In-rich) conditions. The accumulation of electrons on the InN($11\bar{2}2$) surface is also predicted from the analysis of its band structures. Furthermore, we provide immediate access to the atomic structures of semipolar surfaces under realistic growth conditions using surface phase diagrams.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-12-25

著者

• Akiyama Toru

  Department Of Orthopaedic Surgery Faculty Of Medicine The University Of Tokyo

• Nakamura Kohji

  Department Of Dermatology Hiroshima University School Of Medicine

• Ito Tomonori

  Department Of Chemical And Biochemical Engineering Faculty Of Engineering Toyama University

• Yamashita Tomoki

  Department of Physics Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan

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