Ab initio-Based Study for Adatom Kinetics on Semipolar GaN($11\bar{2}2$) Surfaces
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概要
- 論文の詳細を見る
The kinetics of Ga and N adatoms on semipolar GaN($11\bar{2}2$) surfaces under growth conditions is investigated employing density-functional total-energy calculations. The energy barrier for Ga migration on the $c(2{\times}2)$ surface (1.2 eV) is found to be much higher than that on conventional $c$-plane (0001) surface (${\sim}0.4$ eV), leading to the desorption of both Ga and N atoms under conventional growth conditions. In contrast, both Ga and N atoms can be adsorbed and migrate without desorption on the $1{\times}1$ surface. These results imply that either low temperature or high-Ga pressure, in which the $1{\times}1$ surface is stabilized, is required to grow atomically flat GaN on ($11\bar{2}2$) orientation, consistent with recent experimental results.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-12-25
著者
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Akiyama Toru
Department Of Orthopaedic Surgery Faculty Of Medicine The University Of Tokyo
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Nakamura Kohji
Department Of Dermatology Hiroshima University School Of Medicine
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Ito Tomonori
Department Of Chemical And Biochemical Engineering Faculty Of Engineering Toyama University
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Akiyama Toru
Department of Physics Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan
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Yamashita Tomoki
Department of Physics Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan
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