Oxygen Trap Hypothesis in Silicon Oxide
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関連論文
- Origin of Dark Regions in Scanning Tunneling Microscopy Images Formed by Thermal Oxidation of Si(111) Surface
- Effect of Si/SiO_2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO_2
- Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
- Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
- Stress dependence of oxidation reaction at SiO2/Si interfaces during silicon thermal oxidation
- Microscopic Mechanism of Oxygen Transport during Thermal Silicon Oxidation
- Theoretical Investigation of Oxygen Diffusion in Compressively Strained High-Density α-Quartz
- First-Principles Analyses of O_2 Molecules around Ultrathin SiO_2/Si(100) Interface
- Oxygen Trap Hypothesis in Silicon Oxide
- Theoretical Study of Excess Si Emitted from Si-oxide/Si Interfaces
- Effect of Nitrogen on Diffusion in Silicon Oxynitride
- The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO_2
- Interfacial Silicon Emission in Dry Oxidation-the Effect of H and Cl
- Interfacial Silicon Emission in Dry Oxidation -the Effect of H and Cl
- Oxidation Simulation of Heavily Phosphorus-Doped Silicon based on the Interfacial Silicon Emission Model : Semiconductors
- The Effect of Chlorine on Silicon Oxidation : Simulation based on the Interfacial Silicon Emission Model
- Phenomenological Theory on Si Layer-by-Layer Oxidation with Small Interfacial Islands
- Oxidation Simulation of (111) and (100) Silicon Substrates Based on the Interfacial Silicon Emission Model
- Simulation of High-Pressure Oxidation of Silicon Based on the Interfacial Silicon Emission Model
- Unified Simulation of Silicon Oxidation Based on the Interfacial Silicon Emission Model
- Transport Mechanism of Interfacial Network Forming Atoms during Silicon Oxidation