Capless Rapid Thermal Annealing of Silicon Ion Implanted Gallium Arsenide
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概要
- 論文の詳細を見る
Argon arc lamp rapid thermal annealing of ion implanted gallium arsenide (GaAs) has been studied. Silicon ion was implanted into semi-insulating GaAs at 120 keV with a dose of 3×10^<12> cm^<-2>. Capless annealing was performed by dc argon arc lamp at temperatures of 850-1000℃. Carrier concentration profiles are abrupt at the interface and fit well with the LSS profile. Abruptness of the profile was 0.78 at 850℃ for 15 s and at 1000℃ for 2 s, where the abruptness was defined as 1.0 in LSS theoretical profile and a lower value shows a gentler profile. This value is much greater than that by tungsten-halogen lamp rapid thermal annealing of 0.36 and furnace annealing of 0.34. This annealing technique is useful for the formation of a shallow channel layer with abrupt・carrier concentration profile for GaAs MESFET's.
- 社団法人応用物理学会の論文
- 1987-02-20
著者
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Hara T
Electrical Engineering Hosei University
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Hara Tohru
Electrical Engineering Hosei University
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Gelpey Jeffrey
Eaton Thin Film Systems
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