Estimation of the Donor Concentration in ZnSe from the Emission Related to Donor Bound Excitons
スポンサーリンク
概要
- 論文の詳細を見る
The relation between the donor concentration (N_D) and the total emission intensity related to the donor bound excitons has been ascertained using doped and nondoped high-purity ZnSe single crystals. Two different relations were obtained for as-grown and Zn-dipped crystals. These relations are available for reference curves to estimate the value of N_D in ZnSe single crystals.
- 社団法人応用物理学会の論文
- 1991-03-15
著者
-
Isshiki Minoru
Department Of Materials Science Faculty Of Engineering Tohoku University
-
Isshiki Minoru
Research Institute Of Mineral Dressing And Metallurgy Tohoku University
-
Uchida Wakio
Physics Department College Of General Education Tohoku University
-
Satoh Shiro
Ricoh Research Institute Of General Electronics
-
Masumoto K
Res. Inst. Electric And Magnetic Materials Sendai Jpn
-
Masumoto Katashi
Department Of Ekectronic Materials Faculty Of Science And Engineering Ishinomaki Sensyu University:t
関連論文
- Isothermal Vapor Phase Epitaxy of Hg_(Cd_Zn_y)_xTe : Thin Films Using Semiclosed Open-Tube System
- Instability of Cl-Related Deep Defects in ZnSe
- Effect of Heat-treatments on AgGaS_2 Photoluminescence
- Growth of CdSiAs_2 Single Crystals by Chemical Transportation
- Effect of Cd Reservoir on the Composition (y) of Cd_Zn_yTe Epilayers Grown by Hot Wall Epitaxy
- Growth and Evaluation of Cd_Zn_yTe Epilayers on (100) GaAs Substrates by Hot Wall Epitaxy
- Growth Kinetics of Hg_Cd_xTe Epilayers by Semiclosed Open-Tube Isothermal Vapor Phase Epitaxy
- Effect of CdTe Layer Thickness on Hg_Cd_xTe Epilayer Growth by Isothermal Vapor Phase Epitaxy Using (100) CdTe/GaAs Substrates and Void Formation at the Interface
- Optically Detected Cyclotron Resonance in CdTe
- Solid Solubility Determination and Single Crystal Preparation of New Quaternary Solid Solution System of (Pb_Ge_x)(S_Se_z)
- Millimeter and Submillimeter Cyclotron Resonance Study of High-Purity ZnSe
- Irradiation Effects of ^Co γ-Ray on the near Band-Edge Photoluminescence (PL) of ZnSe : Optical Properties of Condensed Matter
- Light Figure Phenomena Revealed and Crystal Faces Developed by Chemical Etching in Silicon Crystal
- Photoluminescence and Acceptor State of Na in ZnSe
- Estimation of the Donor Concentration in ZnSe from the Emission Related to Donor Bound Excitons
- Cyclotron Resonance of Photoexcited Holes in High Quality ZnSe
- Electrical Properties of ZnSe
- Heteroepitaxial Growth of Chalcopyrite-type CuAlSe_2 Compound Semiconductor by Molecular Beam Epitaxy