Irradiation Effects of ^<60>Co γ-Ray on the near Band-Edge Photoluminescence (PL) of ZnSe : Optical Properties of Condensed Matter
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概要
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Near band-edge photoluminescence (PL) in ZnSe single crystals with ^<60>Co γ-Ray of various dosages was examined at 4.2K. The emission intensity of the so-called I^D_1(445.3 nm) and Y_0(476.0 nm) lines increases obviously with increasing dosage and decreases after anneling. It is concluded that these emission lines are closely related to the native lattice defects, which are probably a zinc vacancy (V_<Zn>) for the I^D_1 line and a dislocation for the Y_0 line.
- 社団法人応用物理学会の論文
- 1988-09-20
著者
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MOCHIZUKI Katsumi
Department of Materials Science, Faculty of Engineering, Tohoku University
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Masumoto Katashi
Department Of Materials Science Faculty Of Engineering Tohoku University
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Masumoto Katashi
Department Of Ekectronic Materials Faculty Of Science And Engineering Ishinomaki Sensyu University:t
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Mochizuki Katsumi
Department Of Electronic Materials Faculty Of Engineering Ishinomaki Senshu University
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Mochizuki Katsumi
Department Of Materials Science Faculty Of Engineering Tohoku University
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