Composition Control of CdS_xSe_<1-x> Thin Layers Grown on CdS Substrate by a Solid-State Diffusion Technique
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概要
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CdS_xSe_<1-x> layers with graded-composition were grown on a CdS substrate by a solid-state diffusion technique. Efforts were made to control the surface composition X of the growth layers CdS_xSe_<1-x> by heat-treating the CdS substrate under independently-regulated partial pressures of sulfur and selenium with a fixed partial pressure ratio (P_<s2>/P_<se2>). The results confirmed that the surface composition X was controlled successfully over a wide composition range of CdS_xSe_<1-x>. Attempts were also made to control the deviation from stoichiometry of the surface layers with a fixed composition X.
- 社団法人応用物理学会の論文
- 1982-04-20
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