Vapor Phase Transport of Cadmium Telluride under Controlled Partial Pressure of Constituent Element
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概要
- 論文の詳細を見る
Vapor phase transport of cadmium telluride was studied by controlling the partial pressure ozone of the constituent elements. A reservoir chamber at one end of the growth tube is used to control the partial pressure of tellurium or cadmium. When the partial pressure in the reservoir chamber is high, the transport rate is limited by the diffusion process in the vapor phase. For the low partial pressure, the transport rate is limited by the vaporization process at high growth temperature. The transport rate was analysed by assuming the probable reactions on the surface of the crystal.
- 社団法人応用物理学会の論文
- 1976-08-05
著者
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Igaki Kenzo
Department Of Materials Science Faculty Of Engineering Tohoku University
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Igaki Kenzo
Department Of Materials Science School Of Engineering Tohoku University
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Mochizuki Katsumi
Department Of Materials Science School Of Engineering Tohoku University
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Mochizuki Katsumi
Department Of Electronic Materials Faculty Of Engineering Ishinomaki Senshu University
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OHASHI Nobumitsu
Department of Materials Science, Tohoku University
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Ohashi Nobumitsu
Department Of Materials Science School Of Engineering Tohoku University
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