Thermally-Stimulated Current of Zinc Selenide Heat-Treated in Controlled Partial Pressures of Constituent Elements
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概要
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The purpose of the present investigation is to obtain information on the trap levels related to native defects. TSC (thermally-stimulated current) measurements were made on vapor-grown ZnSe single crystals heat-treated in Zn or Se vapor in order to control the deviation from stoichiometry. Two TSC peaks were observed near 150 K and 180 K which were identified as having originated from two electron trap levels at 0.l9±0.04 eV and 0.31±0.04 eV, respectively, below the bottom of the conduction band. These trap levels may be explained as a result of the trace impurity defects whose concentrations increase with increase of Zn concentration or the associated defects consisting of a native defect (V_<Se> or Zn_i) and impurity.
- 社団法人応用物理学会の論文
- 1980-03-05
著者
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Satoh Shiro
Department Of Materials Science Faculty Of Engineering Tohoku University
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Igaki Kenzo
Department Of Materials Science Faculty Of Engineering Tohoku University
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