Bound Exciton Emission of Zinc Selenide
スポンサーリンク
概要
- 論文の詳細を見る
Bound exciton emission and excitation spectra of the I_2 and I_3 lines were measured at 2 K for zinc selenide single crystals heat-treated in controlled partial pressures of constituent elements as a function of zinc or selenium pressure. The intensity of the I_2 lines due to Cl_<Se> donors and In_<Zn> donors decreases with the increase in selenium pressure. Intensity variation of the I_2 lines is considered to be concerned with the out-diffusion of Cl and In from crystals, the formation of the SA-center or the occupation of the Se site by Cl.
- 社団法人応用物理学会の論文
- 1981-10-05
著者
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Satoh Shiro
Department Of Materials Science Faculty Of Engineering Tohoku University
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Igaki Kenzo
Department Of Materials Science Faculty Of Engineering Tohoku University
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