Photoluminescence and Electrical Properties of Undoped and Cl-Doped ZnSe

概要

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Undoped and Cl-doped ZnSe specimens were heat-treated in Zn or Se vapor, or in molten Zn, and the photoluminescence spectra and electron concentration of the specimens were measured. Several new emissions were observed in high-purity ZnSe with Cl concentration ([Cl]) lower than 10^<15> cm^<-3> while SA-emission band and a I^<DEEP>_1 line were observed in ZnSe with [Cl]>10^<15> cm^<-3> heat-treated in molten Zn. The former was observed to increase with [Cl] and with the Zn vapor pressure, and the latter to increase with [Cl]. The electron concentration at room temperature was proportional to [Cl] for [Cl]<10^<17> cm^<-3>. This paper proposes a model explaining these effects on the [Cl] dependence of the concentration of defects, Cl_<se> donors, SA-centers (V_<zn>Cl_<se>) and V-__<zn>.
社団法人応用物理学会の論文
1983-01-20