Heteroepitaxial Growth of Chalcopyrite-type CuAlSe_2 Compound Semiconductor by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-12-30
著者
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Masumoto Katashi
Department Of Ekectronic Materials Faculty Of Science And Engineering Ishinomaki Sensyu University:t
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Masumoto Katashi
Department Of Electronic Materials Faculty Of Science And Engineering Ishinomaki Senshu University:t
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KIMOTO Kazuhiko
Department of Ekectronic Materials, Faculty of Science and Engineering, Ishinomaki Sensyu University
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Mochizuki Katsumi
Department Of Electronic Materials Faculty Of Science And Engineering Ishinomaki Senshu University
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Mochizuki Katsumi
Department Of Electronic Materials Faculty Of Engineering Ishinomaki Senshu University
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Kimoto K
Department Of Electronic Materials Faculty Of Science And Engineering Ishinomaki Senshu University
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Kimoto Kazuhiko
Department Of Ekectronic Materials Faculty Of Science And Engineering Ishinomaki Sensyu University
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- Vapor Phase Transport of Cadmium Telluride under Controlled Partial Pressure of Constituent Element
- Composition Control of CdS_xSe_ Thin Layers Grown on CdS Substrate by a Solid-State Diffusion Technique
- Heteroepitaxial Growth of Chalcopyrite-type CuAlSe_2 Compound Semiconductor by Molecular Beam Epitaxy
- Electrical Conductivity of N-Type CdTe at Low Temperatures