Effect of Substrate Bias Voltage on the Thermal Stability of Cu/Ta/Si Structures Deposited by Ion Beam Deposition
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-05-15
著者
-
ISSHIKI Minoru
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
-
Mimura Kouji
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
-
Lim Jae-won
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
-
MIYAKE Kiyoshi
Graduate School of Science and Engineering, Saitama University
-
YAMASHITA Mutsuo
Seinan Industries Co. Ltd.
関連論文
- Thermal and Optical Properties of Yb^-Doped Y_2O_3 Single Crystal Grown by the Micro-Pulling-Down Method
- Growth and Characterization of Yb^-doped (Lu, Y)AlO_3 Fiber Single Crystals Grown by the Micro-Pulling-Down Method
- Effect of Ar/Ar-H_2 Plasma Arc Melting on Cu Purification
- Characteristics of Printed Thin Films Using Indium Tin Oxide (ITO) Ink
- Influence of Substrate Bias Voltage on the Impurity Concentrations in Hf Films Deposited by Ion Beam Deposition Method
- Interpretation of Dominant Impurities in Cu Films by Secondary Ion Mass Spectrometry and Glow Discharge Mass Spectrometry
- Trace Impurity Analysis in Ta Films Using Glow Discharge Mass Spectrometry : Concentration Change of Impurities by Applying Negative Substrate Bias Voltage
- Agglomeration of Copper Thin Film in Cu/Ta/Si Structure
- Effect of Substrate Bias Voltage on the Thermal Stability of Cu/Ta/Si Structures Deposited by Ion Beam Deposition
- Characteristics of ion beam deposited copper thin films as a seed layer : effect of negative substrate bias voltage
- Influence of Substrate Bias Voltage on the Properties of Cu Thin Films by Sputter Type Ion Beam Deposition
- Improvement of Ta Barrier Film Properties in Cu Interconnection by Using a Non-mass Separated Ion Beam Deposition Method
- Modeling of Elution Curves in Preparative Chromatography Using Anion-Exchange Resin for Cobalt Purification
- Purification of Manganese Chloride with Chelating Resin Containing Iminodiacetate Groups in Ammonium Chloride Solution
- Copper Purification by Anion-Exchange Separation in Chloride Media
- Improvement in Oxidation Resistance of Cu-Al Dilute Alloys by Pre-annealing in H_2 and Ar Atmospheres
- Effect of Floating Zone Refining under Reduced Hydrogen Pressure on Copper Purification
- Oxidation Mechanism of Copper at 623-1073K
- Self-Diffusion along Dislocations in Ultra High Purity Iron
- Magnetic Properties of β-FeSi_2 Semiconductor
- Instability of Cl-Related Deep Defects in ZnSe
- Effect of Cd Reservoir on the Composition (y) of Cd_Zn_yTe Epilayers Grown by Hot Wall Epitaxy
- Growth and Evaluation of Cd_Zn_yTe Epilayers on (100) GaAs Substrates by Hot Wall Epitaxy
- Growth Kinetics of Hg_Cd_xTe Epilayers by Semiclosed Open-Tube Isothermal Vapor Phase Epitaxy
- Effect of CdTe Layer Thickness on Hg_Cd_xTe Epilayer Growth by Isothermal Vapor Phase Epitaxy Using (100) CdTe/GaAs Substrates and Void Formation at the Interface
- Prediction of Surface Temperature on Metal Beads Subjected to Argon-Hydrogen Transferred Arc Plasma Impingement
- Optically Detected Cyclotron Resonance in CdTe
- Surface Segregation of Chromium in a Copper-Chromium Alloy and its Effect on Formation of a Native Oxide Layer
- Surface Layer Formed by Selective Oxidation in High-Purity Copper-Titanium Binary Alloys
- Floating Zone Refining Iron Reduced Pressure with Dynamic Hydrogen Flow
- Purification of Hafnium by Hydrogen Plasma Arc Melting
- Interpretation of Dominant Impurities in Cu Films by Secondary Ion Mass Spectrometry and Glow Discharge Mass Spectrometry
- Trace Impurity Analysis in Ta Films Using Glow Discharge Mass Spectrometry: Concentration Change of Impurities by Applying Negative Substrate Bias Voltage
- Effect of Substrate Bias Voltage on the Thermal Stability of Cu/Ta/Si Structures Deposited by Ion Beam Deposition