Interpretation of Dominant Impurities in Cu Films by Secondary Ion Mass Spectrometry and Glow Discharge Mass Spectrometry
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概要
- 論文の詳細を見る
Cu films were deposited on Si (100) substrates at substrate bias voltages of 0 V and $-50$ V by non-mass separated ion beam deposition. SIMS and GDMS were used to determine the impurity concentrations of a Cu target and Cu films. According to the quantitative GDMS results, many unknown peaks observed in the SIMS spectra of the Cu films were assigned to cluster states such as CxHx, OxHx, and CxOxHx. Moreover, it was found that the dominant impurities in the films were H, C, N, and O elements.
- 2005-01-15
著者
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Mimura Kouji
Institute For Advanced Materials Processing Tohoku University
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Isshiki Minoru
Instite For Advanced Materials Processing Tohoku University
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Lim Jae-won
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Bae Joon
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Bae Joon
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan
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Mimura Kouji
Instite for Advanced Materials Processing Tohoku University
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