Annealing Effect of ZnSe:N/ZnSe Grown by Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
High-quality nitrogen-doped ZnSe (ZnSe:N) epitaxial layers were grown on ZnSe substrates in a low-pressure metalorganic chemical vapor deposition (MOCVD) system under optimum growth conditions using hydrogen as a carrier gas and ammonia as a dopant source. In order to enhance the activation efficiency of nitrogen in ZnSe epitaxial layers, ZnSe:N/ZnSe was annealed in melted zinc using the rapid thermal annealing technique. The dependence of net acceptor concentration on annealing duration, VI/II flux ratio, and ammonia flux was examined. The highest net acceptor concentration value calculated from capacitance voltage (C-V) measurements reached 2×10^<17> cm^<-3>. This is the highest value obtained so far for ZnSe homosystem epitaxial layers grown by the MOCVD method.
- 社団法人応用物理学会の論文
- 1999-05-15
著者
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Miki T
Ricoh Research Institute Of General Electronics
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Isshiki Minoru
Institute For Advanced Materials Processing Tohoku University
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Isshiki Minoru
Instite For Advanced Materials Processing Tohoku University
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Omino Akira
Mitsui Mining Co. Ltd.
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WANG Jifeng
Institute for Advanced Materials Processing, Tohoku University
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Wang Jifeng
Institute For Advanced Materials Processing Tohoku University
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MIKI Takeshi
Ricoh Research Institute of General Electronics
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ISSHIKI Minoru
Institute for Advanced Materials Processing, Tohoku University
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