Mimura Kouji | Instite for Advanced Materials Processing Tohoku University

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概要

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著作論文

Effect of Ar/Ar-H_2 Plasma Arc Melting on Cu Purification
Influence of Substrate Bias Voltage on the Impurity Concentrations in Hf Films Deposited by Ion Beam Deposition Method
Agglomeration of Copper Thin Film in Cu/Ta/Si Structure
Purification of Manganese Chloride with Chelating Resin Containing Iminodiacetate Groups in Ammonium Chloride Solution
Copper Purification by Anion-Exchange Separation in Chloride Media
Improvement in Oxidation Resistance of Cu-Al Dilute Alloys by Pre-annealing in H_2 and Ar Atmospheres
Effect of Floating Zone Refining under Reduced Hydrogen Pressure on Copper Purification
Oxidation Mechanism of Copper at 623-1073K
Self-Diffusion along Dislocations in Ultra High Purity Iron
Prediction of Surface Temperature on Metal Beads Subjected to Argon-Hydrogen Transferred Arc Plasma Impingement
Surface Layer Formed by Selective Oxidation in High-Purity Copper-Titanium Binary Alloys
Annealing Effect and Floating Zone Refining of Copper under Hydrogen Atmosphere
Precise Purity-Evaluation of High-Purity Copper by Residual Resistivity Ratio
Purification of Hafnium by Hydrogen Plasma Arc Melting
Interpretation of Dominant Impurities in Cu Films by Secondary Ion Mass Spectrometry and Glow Discharge Mass Spectrometry
Trace Impurity Analysis in Ta Films Using Glow Discharge Mass Spectrometry: Concentration Change of Impurities by Applying Negative Substrate Bias Voltage
Effect of Substrate Bias Voltage on the Thermal Stability of Cu/Ta/Si Structures Deposited by Ion Beam Deposition

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