Diffusion of Phosphorus and Boron into Silicon at Low Temperatures by Heating with Light Irradiation
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概要
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The diffusion of phosphorus and boron from a doped oxide into silicon upon heating with light irradiation was investigated at low temperatures. A tungsten halogen lamp was used as a light source. The diffusion coefficient for the 280-nm-thick doped oxide at 760℃ upon light irradiation corresponded to that at 900℃ upon heating in a furnace for both impurities, indicating enhanced diffusion in the former case. Arsenic diffusion was not enhanced upon heating with light irradiation. The reason for the enhanced diffusion may be that excess self-interstitials are generated at the interface between the doped oxide and silicon during light irradiation. This enhances the diffusion of impurities in silicon, which diffuse mainly by the interstitialcy mechanism.
- 社団法人応用物理学会の論文
- 1997-12-15
著者
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Ishikawa Y
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Ishikawa Y
Dowa Mining Co. Ltd. Tokyo
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Ishikawa Y
Hokkaido Univ. Sapporo Jpn
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ISHIKAWA Yutaka
Electrical and Electronics Engineering, Nippon Institute of Technology
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MARUYAMA Mitsuharu
Electrical and Electronics Engineering, Nippon Institute of Technology
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Maruyama Mitsuharu
Electrical And Electronics Engineering Nippon Institute Of Technology:(present) Okaya Electric Indus
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Ishikawa Yutaka
Electrical And Electronics Engineering Nippon Institute Of Technology
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