Doping of Phosphorus and Boron into Silicon by Solid-Phase Diffusion at Low Temperatures (<650℃)

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概要

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• The diffusion of phosphorus and boron into silicon at lower than 650℃ was achieved. Spin-coated glass was used for the diffusion source and samples were heated with a tungsten halogen lamp. The key to diffusing these impurities into silicon at such low temperatures is to decrease the temperature of silicon without reducing some of the light radiated from the halogen lamp. Impurity concentrations at the silicon surface were 1-2×10^<20> cm^<-3> at 620-720℃. These impurities diffused into silicon typically at least 0.1 μm from the silicon surface after 40 min of 620℃ annealing.

• 社団法人応用物理学会の論文
• 1995-01-01

著者

• Ishikawa Yutaka

  Electrical And Electronics Engineering Nippon Institute Of Technology

• Sugioka Katsutoshi

  Electrical And Electronics Engineering Nippon Institute Of Technology

関連論文

• Diffusion of Phosphorus and Boron into Silicon at Low Temperatures by Heating with Light Irradiation
• Doping of Phosphorus and Boron into Silicon by Solid-Phase Diffusion at Low Temperatures (

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