Erratum: "Synthesis of Multiwalled Carbon Nanotubes at Temperatures below 300 °C by Hot-Filament Assisted Chemical Vapor Deposition"
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概要
- 論文の詳細を見る
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2006-03-25
著者
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Ishikawa Yutaka
Department Of Electrical And Electronics Engineering Nippon Institute Of Technology
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Jinbo Hironobu
Department Of Electrical And Electronics Engineering Nippon Institute Of Technology
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Jinbo Hironobu
Department of Electrical and Electronics Engineering, Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Minami-Saitama, Saitama 345-8501, Japan
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Ishikawa Yutaka
Department of Electrical and Electronics Engineering, Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Minami-Saitama, Saitama 345-8501, Japan
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- The Enhanced Electroplating of Nickel by UV-Irradiation before Plating Step
- Solutions of Simultaneous Equations for Oxidation Enhanced and Retarded Diffusions and Oxidation Stacking Fault in Silicon
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- Growth of Single-Walled Carbon Nanotubes by Hot-Filament Assisted Chemical Vapor Deposition below 500 °C
- Effect of Tungsten on Synthesis of Multiwalled Carbon Nanotubes Using Cobalt as Catalyst
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- Erratum: "Synthesis of Multiwalled Carbon Nanotubes at Temperatures below 300 °C by Hot-Filament Assisted Chemical Vapor Deposition"
- The Diffusion of Bismuth in Silicon