The Enhanced Diffusion of Low-Concentration Phosphorus, Arsenic and Boron in Silicon during IR-Heating
スポンサーリンク
概要
- 論文の詳細を見る
The diffusion of P, As and B in silicon during IR-heating has been investigated quantitatively under low-concentration conditions. A spin-on source was used for the diffusion of the dopants. The diffusion coefficient was determined by fitting the measured concentration profile to the complementary error function. Enhanced diffusion was obtained for these three impurities. The degree of the enhancement became larger in the order of As, P and B. The cause of the enhancement was found to be the generation of excess self-interstitials during IR-heating.
- 社団法人応用物理学会の論文
- 1989-08-20
著者
-
Ishikawa Yutaka
Department Of Electrical And Electronics Engineering Nippon Institute Of Technology
-
Nakamichi Ichiro
Department Of Electrical And Electronics Engineering Nippon Institute Of Technology
-
YAMAUCHI Kazuyuki
Department of Electrical and Electronics Engineering, Nippon Institute of Technology
関連論文
- Enhanced-Nitridation of Silicon by UV-Irradiation
- Oxidation-Retarded Diffusion of Bismuth in Silicon
- Estimation of Cytoplasmic Free Mg^+ Levels and Phosphorylation Potentials in Mung Bean Root Tips by In Vivo ^P NMR Spectroscopy
- Etching of Nondiamond Carbon in Diamond Thin Films Synthesized by Hot-Filament Chemical Vapor Deposition with Ultraviolet Irradiation
- Effect of Oxidation due to Ultraviolet-Light Irradiation on Diamond Thin Films Synthesized by Hot-Filament Chemical Vapor Deposition
- The Effect of Ultraviolet Irradiation on Electroless Plating Process of Nickel
- The Effect of Ultraviolet Irradiation on Eleclro and Electroless Platings of Nickel
- The Effect of Thermal Oxidation of Silicon on Boron Diffusion in Extrinsic Conditions
- Concentration Dependence of the Diffusion Coefficient of Boron in Silicon
- Growth of Single-Walled Carbon Nanotubes below 450 °C Using Cobalt Catalyst
- Enhanced Thermal Oxidation of Silicon in Steam Ambient by UV-Irradiation
- Low-Temperature Oxidation of Silicon in Dry O_2 Ambient by UV-lrradiation
- Low-Temperature Oxidation of Silicon in H_2O_2 Ambient by UV Irradiation (Short Note)
- Synthesis of Multiwalled Carbon Nanotubes at Temperatures below 300°C by Hot-Filament Assisted Chemical Vapor Deposition
- Low-Temperature Thermal Oxidation of Silicon in N_2O by UV-Irradiation
- The Enhanced Electroplating of Nickel by UV-Irradiation before Plating Step
- Solutions of Simultaneous Equations for Oxidation Enhanced and Retarded Diffusions and Oxidation Stacking Fault in Silicon
- The Enhanced and Suppressed Electroless Plating of Copper by UV-Irradiation : Chemistry (incl. physical process)
- Growth of Single-Walled Carbon Nanotubes by Hot-Filament Assisted Chemical Vapor Deposition below 500 °C
- Effect of Tungsten on Synthesis of Multiwalled Carbon Nanotubes Using Cobalt as Catalyst
- Enhanced Thermal Oxidation of Silicon by UV-Irradiation
- The Enhanced Diffusion of Low-Concentration Phosphorus, Arsenic and Boron in Silicon during IR-Heating
- Thermal Oxidation of Antimony-Doped Silicon (Short Note)
- Erratum: "Synthesis of Multiwalled Carbon Nanotubes at Temperatures below 300 °C by Hot-Filament Assisted Chemical Vapor Deposition"
- The Diffusion of Bismuth in Silicon