Enhanced Thermal Oxidation of Silicon by UV-Irradiation
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概要
- 論文の詳細を見る
Silicon can be thermally oxidized at low temperatures under dry O_2 or N_2O flow with UV-irradiation. The oxide thickness is about 9.0 nm in 4 h at 500℃ on dry O_2+UV oxidation. The oxide formed by dry O_2+UV is thicker than that formed by N_2O+UV at a relatively long oxidation time. The main oxidation species are ozone for dry O_2+UV and excited-state ^1D oxygen atoms for N_2O+UV. The quality of oxide film formed by dry O_2+UV is equal to that formed by common oxidation in dry O_2 without UV.
- 社団法人応用物理学会の論文
- 1991-04-15
著者
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Ishikawa Yutaka
Department Of Electrical And Electronics Engineering Nippon Institute Of Technology
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Uchihara Takeshi
Department Of Electrical And Electronics Engineering Nippon Institute Of Technology
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Nakamichi Ichiro
Department Of Electrical And Electronics Engineering Nippon Institute Of Technology
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SHIBAMOTO Tsuyoshi
Department of Electrical and Electronics Engineering, Nippon Institute of Technology
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Shibamoto Tsuyoshi
Department Of Electrical And Electronics Engineering Nippon Institute Of Technology
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ISHIKAWA Yutaka
Department of Electrical and Electronics Engineering, Nippon Institute of Technology
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