KATAOKA Masayuki | Materials & Electronic Devices Laboratory, Mitsubishi Electric Corporation
スポンサーリンク
概要
関連著者
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TANIMURA Junji
Materials and Electronic Devices Laboratory, Mitsubishi Electric Corporation
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KATAOKA Masayuki
Materials & Electronic Devices Laboratory, Mitsubishi Electric Corporation
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Kataoka M
Hokkaido Univ. Sapporo Jpn
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Tanimura J
Mitsubishi Electric Corp. Hyogo Jpn
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Tanimura Junji
Materials and Electronic Device Laboratory, Mitsubishi Electric Corporation
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Wada Osamu
Materials & Electronic Device Laboratory Mitsubishi Electric Corporation
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Wada Osamu
Materials And Structures Laboratory Tokyo Institute Of Technology
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OGAMA Tetsuo
Materials and Electronic Devices Laboratory, Mitsubishi Electric Corporation
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KOJIMA Kazuyoshi
Central Research Laboratory, Mitsubishi Electric Corporation
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Tanimura Junji
Materials And Electronic Devices Laboratory Mitsubishi Electric Corporation
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Kojima Kazuyoshi
Central Research Laboratory Mitsubishi Electric Corporation
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Ogama Tetsuo
Materials and Electronic Device Laboratory, Mitsubishi Electric Corporation
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Wada O
The Department Of Electrical And Electronics Engineering Kobe University
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TAKAMI Tetsuya
Central Research Laboratory, Mitsubishi Electric Corporation
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Wada O
The Femtosecond Technology Research Association:the Kobe University.
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Takami T
Mitsubishi Electric Corp. Hyogo Jpn
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Ogama T
Mitsubishi Electric Corp. Hyogo Jpn
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Kuroda Ken'ichi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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HAMANAKA Koichi
Central Research Laboratory, Mitsubishi Electric Corporation
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Hamanaka Koichi
Central Research Laboratory Mitsubishi Electric Corporation
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HAMANAKA Kenjiro
Tsukuba Research Laboratory, Nippon Sheet Glass Co., Ltd.
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Hamanaka K
Tsukuba Research Laboratory Nippon Sheet Glass Co. Ltd.
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Kojima Kenichi
Graduate School Of Integrated Science Yokohama City University
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Kojima Kenichi
Department Of Physics Yokohama City University
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Kojima K
Department Of Electronic Engineering Faculty Of Engineering Aichi Institute Of Technology
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Kojima Kenzo
Department Of Electrical Engineering Aichi Institute Of Technology
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Wada Osamu
FESTA Laboratories
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Nunoshita M
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Kojima Kenzo
Department Of Electronic Engineering Faculty Of Engineering Aichi Institute Of Technology
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Nunoshita M
Mitsubishi Electric Corp. Hyogo Jpn
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Nunoshita Masahiro
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Nunoshita Masahiro
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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HORIKAWA Tsuyoshi
Materials & Electronic Devices Laboratory, Mitsubishi Electric Corporation
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MIKAMI Noboru
Materials & Electronic Devices Laboratory, Mitsubishi Electric Corporation
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MAKITA Tetsuro
Materials & Electronic Devices Laboratory, Mitsubishi Electric Corporation
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SATO Kazunao
Materials & Electronic Devices Laboratory, Mitsubishi Electric Corporation
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NUNOSHITA Masahiro
Materials & Electronic Devices Laboratory, Mitsubishi Electric Corporation
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Makita T
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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Makita Tetsuro
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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Mikami N
Tohoku Univ. Sendai Jpn
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Wada Osamu
Fujitsu Laboratories
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Yokoyama Kazuo
Materials and Electronic Devices Laboratory, Mitsubishi Electric Corporation
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Kuroda Kenji
Faculty Of Engineering The University Of Tokushima
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Yokoyama Koji
School Of Science And Engineering Waseda University
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Kuroda K
Central Research Laboratory Hitachi Ltd.
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Sato K
Ntt Network Innovation Laboratories
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Kojima Kazuyoshi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Wada Osamu
The Femtosecond Technology Research Association:the Kobe University.
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Sato K
Ykc Corp. Musashimurayama‐shi Jpn
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Yokoyama K
Waseda Univ. Tokyo Jpn
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Mikami N
Mitsubishi Electric Corp. Hyogo Jpn
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Horikawa Tsuyoshi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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KURODA Keigo
Department of Materials Science, Faculty of Science, Hiroshima University
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Kuroda Ken'ichi
Central Research Laboratory, Mitsubishi Electric Corporation
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Wada Osamu
Materials and Electronic Device Laboratory, Mitsubishi Electric Corporation
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Kataoka Masayuki
Materials and Electronic Device Laboratory, Mitsubishi Electric Corporation
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Yokoyama Kazuo
Material Research Laboratory, Mitsubishi Electric Corporation, Tsukaguchi, Amagasaki, Hyogo 661
著作論文
- Dielectric Properties of (Ba,Sr)TiO_3 Thin Films Deposited by RF Sputtering
- 45° Grain Boundary Junctions in (001)-Oriented BiSrCaCuO Films
- (01n)-Oriented BiSrCaCuO Thin Films Formed on CeO_2 Buffer Layers
- Microscopic Study of an Artificial Grain Boundary Josephson Junction in a BiSrCaCuO Thin Film Formed on a SrTiO_3 (110) Substrate Using a MgO Buffer Layer
- Artificial Grain Boundary Junctions in BiSrCaCuO Thin Films with (11n) and (001) Orientation
- Dependence of Crystal Orientation of BiSrCaCuO Thin Films on Off-Angles of Vicinal SrTiO_3 (110) Surfaces
- Crystal Orientation of BiSrCaCuO (11n) Thin Films Determined by X-ray Asymmetric Reflection
- Microscopic Study on (11n)-Oriented BiSrCaCuO Films by Cross-Sectional Transmission Electron Microscopy
- BiSrCaCuO Thin Film Grown on SrTiO_3 Substrate with Off-Oriented (110) Surface
- Bi_2(Sr, Ca)_3Cu_2O_x and Bi_2(Sr, Ca)_4Cu_3O_x Thin Films with (11n) Orientation