Chemical Kinetic Analysis on the Growth Mechanism of Diamondlike Films from a CH3OH–H2 Mixture
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概要
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The reaction kinetics describing the CH3OH decomposition in CVD conditions are studied by the comparison between the measured and the simulated time-varying gas concentrations. The chemical kinetic calculation for the deposition of the diamondlike film by the conventional tungsten filament method is carried out by making use of a simplified one-dimensional model, and it is shown that CH3 is the main $C$-containing radical. The overall sticking probability of CH3 is roughly estimated as $\beta(\text{CH}_{3}){=}10^{-2}$ for the silicon substrate heated to 1000 K.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-06-20
著者
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Matsui Yasuji
Central Research Laboratory Mitsubishi Electric Corp.
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Matsui Yasuji
Central Research Laboratory, Mitsubishi Electric Corp., Tsukaguchi Honmachi, Amagasaki, Hyogo 661
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Sahara Mieko
Central Research Laboratory, Mitsubishi Electric Corp., Tsukaguchi Honmachi, Amagasaki, Hyogo 661
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