The Growth Mechanism of Diamond Crystals in Acetylene Flames

概要

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To discuss the diamond growth mechanism in acetylene flames, numerical calculations are carried out, including both gaseous reactions in the boundary layer near a water-cooled substrate and overall surface reactions on a growing crystal. It is shown that stable species such as CH_4 and C_2H_4 are rapidly produced in the layer, followed by the methyl radical formation according to the fast partial equilibrium of the reaction, CH_4+H⇆CH_3+H_2. The comparison between the calculated and the measured CH_4 concentrations upon the substrate has revealed that C-radicals adsorbed on the diamond surface are etched by H-atoms to form CH_4, though the surface reactions do not have a significant effect on the gaseous concentrations. The dependences of the growth rate both on the substrate temperature and on the C_2H_2/O_2 ratio are shown to be explainable by the CH_3-precursor model.
社団法人応用物理学会の論文
1990-08-20