Monte-Carlo Simulation of Surface Reactions in Plasma-Enhanced Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Thin Films
スポンサーリンク
概要
- 論文の詳細を見る
A three-dimensional Monte-Carlo simulation of surface reactions in plasma-enhanced chemical vapor deposition of hydrogenated amorphous silicon thin films has been carried out. The increase of Si-H_2 bonds in the films with increase of SiH_2 radical density was explained naturally in terms of surface roughness caused by high sticking probability of SiH_2. The effective roughness monitored as voids by in situ ellipsometry supports the simulated results.
- 社団法人応用物理学会の論文
- 1993-11-15
著者
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Tachibana Kunihide
Department of Electronic Science and Engineering, Kyoto University
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Tachibana Kunihide
Department Of Electronic Science And Engineering Kyoto University
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SHIRAFUJI Tatsuru
Department of Electronics and Information Science, Kyoto Institute of Technology
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Yamamuka M
Mitsubishi Electric Corp. Hyogo Jpn
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Yamamuka Mikio
Department Of Electronics And Information Science Kyoto Institute Of Technology
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Chen Wei-ming
Department Of Electronics And Information Science Kyoto Institute Of Technology
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Shirafuji Tatsuru
Department Of Electrical Engineering Kyoto University
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