In Situ Ellipsometric Monitoring of the Growth of Polycrystalline Silicon Thin Films by RF Plasma Chemical Vapor Deposition (<Special Issue> Plasma Processing)
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概要
- 論文の詳細を見る
Polycrystalline silicon thin films have been deposited by RF plasma-enhanced chemical vapor deposition (CVD) using SiF_4), SiH_4 and H_2 gases at a substrate temperature of 300℃. Growth of the films has been monitored by spectroscopic ellipsometry, and time resolved film compositions have been investigated. The film deposited with SiH_4 diluted by H_2 at a power level of 500 mW/cm^2 showed crystal fraction of 50%, and it increased up to 80% with addition of SiF_4, although the deposition rate decreased and the surface roughness was enhanced. These results suggest that preferential etching of amorphous tissue brings about the increase of crystalline fraction. Crystallization of the film was verified by transmission electron microscopy along with the decrease in hydrogen content shown by the infrared absorption spectrum.
- 社団法人応用物理学会の論文
- 1994-07-30
著者
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HAYASHI Yasuaki
Kyoto Institute of Technology
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Hayashi Yasuaki
Department Of Electronics And Information Science Kyoto Institute Of Technology
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Hayashi Yasuaki
Institute For Super Materials Ulvac Japan Ltd.
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Hayashi Yasuaki
Department Of Electronics Kyoto Institute Of Technology
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Hayashi Yasuaki
Department Of Neurology Okayama National Hospital
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Tachibana Kunihide
Department Of Electronic Science And Engineering Kyoto University
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Tachibana Kunihide
Department Of Electronics And Information Science Kyoto Institute Of Technology
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SHIRAFUJI Tatsuru
Department of Electronics and Information Science, Kyoto Institute of Technology
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MORITA Tatsuo
Central Research Laboratories, SHARP Corporation
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Morita Tatsuo
Central Research Laboratory Sharp Corporation
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MAEKAWA Shinji
Central Research Laboratory, SHARP Corporation
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Shirafuji Tatsuru
Department Of Electrical Engineering Kyoto University
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Maekawa Shinji
Central Research Laboratory Sharp Corporation
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