Analyses of Diamond Nucleation Processes on Carbonized Substrates
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概要
- 論文の詳細を見る
The formation of carbonized interface layers is a spontaneous stage in the nucleation process of the chemical vapor deposition (CVD) of diamond onto substrates, however, the relationship between the carbonization and nucleation stages has not been well understood to date. This paper will discuss diamond nucleation mechanisms in relation to the carbonization of silicon substrates. For this purpose the silicon substrates are first carbonized using direct resistive heating. Then, diamonds are deposited on the substrates using a hot-filament CVD (HF-CVD) method. The experimental results reveal that when no ion effects exist, the solid-phase carbon reaches the same thermal equilibrium state as in the gas-phase during diamond deposition, and that the formation of the carbonized interface layers has no immediate relationship to diamond nucleation.
- 社団法人応用物理学会の論文
- 1997-01-15
著者
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HAYASHI Yasuaki
Kyoto Institute of Technology
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Hayashi Yasuaki
Department Of Electronics And Information Science Kyoto Institute Of Technology
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Hayashi Yasuaki
Institute For Super Materials Ulvac Japan Ltd.
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Hayashi Yasuaki
Department Of Electronics Kyoto Institute Of Technology
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Hayashi Yasuaki
Department Of Neurology Okayama National Hospital
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Li Xi
Department Of Biochemistry And Molecular Biology Tianjin Medical University Cancer Institute And Hos
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Ll Xi
Department of Electronics and Information Science, Kyoto Institute of Technology
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MIYAGI Tadashi
Department of Electronics and Information Science, Kyoto Institute of Technology
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Miyagi Tadashi
Department Of Electronics And Information Science Kyoto Institute Of Technology
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Ll Xi
Department Of Electronics And Information Science Kyoto Institute Of Technology
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