High Speed Deposition of SiO2 Films with Plasma Jet Based on Capillary Dielectric Barrier Discharge at Atmospheric Pressure
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概要
- 論文の詳細を見る
We present an experimental study of plasma enhanced chemical vapor deposition (PECVD) of SiO2 films from tetraethoxysilane (TEOS) using a plasma jet based on capillary dielectric barrier discharge (CDBD) at atmospheric pressure. We tried three different configurations: (a) coaxial type, (b) a crossed type with a vertical plasma jet and a tilted TEOS supply, and (c) another crossed type with the reversed arrangement. The deposition rate of SiO2 films increased with the driving frequency of the plasma jet in all configurations, and as the best record it reached up to 280 nm/s at a frequency of 15 kHz in the configuration (c) with the aid of O3 supply, which was three times as fast as that measured in the configuration (a) without O3 supply.
- Japan Society of Applied Physicsの論文
- 2008-06-25
著者
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Tachibana Kunihide
Department Of Electronic Science And Engineering Kyoto University
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Ito Yosuke
Department Of Electronic Science And Engineering Kyoto University
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Urabe Keiichiro
Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-Katsura, Nishikyo-k
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Takano Nobuhiko
Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-Katsura, Nishikyo-k
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Ito Yosuke
Department Of Chemistry Kumamoto University
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Takano Nobuhiko
Department Of Electronic Science And Engineering Kyoto University
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Urabe Keiichiro
Department Of Electronic Science And Engineering Kyoto University
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ITO Yosuke
Department of Chemical, Energy and Environmental Engineering, Faculty of Environmental and Urban Engineering, Kansai University
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Urabe Keiichiro
Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan
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