Effect of Series Capacitance and Accumulated Charge on a Substrate in a Deposition Process with an Atmospheric-Pressure Plasma Jet

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概要

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• In order to investigate the effect of accumulated charge on a substrate surface in the deposition of a SiO2 film with an atmospheric-pressure plasma jet, we have measured the discharge current flowing into a copper substrate, which was placed 20 mm from the exit of the plasma jet and connected to a variable capacitor in series. We found that the discharge current decreased markedly when the capacitance of the substrate was below 100 pF, and the deposition rate of SiO2 traced the variation of the capacitance. To analyze the behavior of the plasma jet, we considered an equivalent circuit of our system and verified the validity of our supposition that the accumulated charge restricts the deposition rate. Thereby, we found that the discharge current and deposition rate were determined by the capacitance of both the glass tube wall and the substrate.

• 2010-06-25

著者

• Fukui Yutaka

  Department Of Animal Science Obihiro University Of Agriculture And Veterinary Medicine

• Urabe Keiichiro

  Department Of Electronic Science And Engineering Kyoto University

• Kunihide Tachibana

  Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-Katsura, Nishikyo-ku, Kyoto 615-8510, Japan

• Yutaka Fukui

  Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-Katsura, Nishikyo-ku, Kyoto 615-8510, Japan

• Osamu Sakai

  Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-Katsura, Nishikyo-ku, Kyoto 615-8510, Japan

• ITO Yosuke

  Department of Chemical, Energy and Environmental Engineering, Faculty of Environmental and Urban Engineering, Kansai University

• Yosuke Ito

  Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-Katsura, Nishikyo-ku, Kyoto 615-8510, Japan

• Keiichiro Urabe

  Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-Katsura, Nishikyo-ku, Kyoto 615-8510, Japan

• Urabe Keiichiro

  Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan

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