Analyses of an Oriented Diamond Nucleation Processes on Si Substrate by Hot Filament Chemical Vapor Deposition
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概要
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Bias-enhanced nucleation (BEN) of oriented diamond on Si(100) substrates was investigated by ellipsometric monitoring using hot-filament chemical vapor deposition (HF-CVD). A plasma was observed above the substrate on the Mo holder by a glow discharge during the BEN process. We confirm that this plasma plays a critical role in the BEN process. A diamond film growth boundary was present when the initial bias voltage was below -250 V. The results of the ellipsometric monitoring indicate that the BEN process includes the following stages: carbonization, incubation, nucleation, nuclei growth and film growth. A scanning electron micrograph showed that biasing for too long induces twinned crystals. It is showed that the biasing time is a very important factor in oriented nucleation.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-08-15
著者
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Hayashi Yasuaki
Department Of Electronics And Information Science Kyoto Institute Of Technology
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Nishino Shigehiro
Department Of Electrical Engineering Kyoto University
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Li Xi
Department Of Biochemistry And Molecular Biology Tianjin Medical University Cancer Institute And Hos
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Hayashi Yasuaki
Department of Electronics and Information Science, Kyoto Institute of Technology,
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Li Xi
Department of Electronics and Information Science, Kyoto Institute of Technology,
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