Electrical Properties of Undoped and Ion-Implanted Cubic SiC Grown on Si(100) by Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Electrical properties of undoped layers of cubic SiC grown on Si(100) well-oriented and off-oriented substrates were evaluated by Hall measurements. The layers grown on off-oriented substrates showed electrical anisotropy. The origin of the electrical anisotropy was investigated by EBIC (electron beam induced current) and TEM (transmission electron microscope) observation. P+ or N$_{2}^{+}$ implantation was also investigated. Electrical activation of implanted impurities was improved by raising annealing temperatures. N$_{2}^{+}$-implanted layers elicited higher electrical activation rates than P+-implanted layers. Planar-type p-n junction diodes were fabricated using ion implantation, and their characteristics were evaluated.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-08-20
著者
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Nishino Shigehiro
Department Of Electrical Engineering Kyoto University
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SHIBAHARA Kentaro
Department of Electrical Engineering, Kyoto University
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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Takeuchi Tatsuya
Department of Electrical Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 060
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Shibahara Kentaro
Department of Electrical Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 060
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