Selective Epitaxial Growth of Silicon Carbide on Silicon using HMDS
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概要
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Epitaxial growth was performed on a selectively masked Si(001) substrate using hexamethyldisilane (HMDS). Carbonization was done using propane at 1250℃. Perfect selectivity was demonstrated at 1150℃. The oxide mask is intact following a 30 minute growth run indicating that earlier problems associated with high temperature growth have been satisfactorily solved. The use of HMDS itself for carbonization affected the selectivity. High flow rates of HMDS also adversely influenced the crystallinity. The addition of HCl to the process could result in improved film quality at this low temperature.
- 社団法人電子情報通信学会の論文
- 1999-12-09
著者
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NISHINO Shigehiro
Department of Electronics and Information Science, Kyoto Institute of Technology
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Nishino Shigehiro
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Nishino Shigehiro
Department Of Electrical Engineering Kyoto University
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JACOB Chacko
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institut
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Jacob Chacko
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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