Effect of Tantalum in Crystal Growth of Silicon Carbide by Sublimation Close Space Technique : Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-12-15
著者
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NISHINO Shigehiro
Department of Electronics and Information Science, Kyoto Institute of Technology
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OHSHIMA Satoru
Department of Cardiology, Nagoya University Graduate School of Medicine
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Ohshima Satoru
Department Of Cardiology Nagoya University Graduate School Of Medicine
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Ohshima Satoru
Department Of Electronics And Information Science Faculty Of Engineering Kyoto Institute Of Technolo
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Nishino Shigehiro
Department Of Electronics And Information Science Faculty Of Engineering Kyoto Institute Of Technolo
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Nishino Shigehiro
Department Of Electrical Engineering Kyoto University
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FURUSHO Tomoaki
Department of Electronics and Information Science, Faculty of Engineering, Kyoto Institute of Techno
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LILOV Stanislav
Department of Semiconductor Physics, Faculty of Physics, University of Sofia
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Lilov Stanislav
Department Of Electronics And Information Science Kyoto Institute Of Technology
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Lilov Stanislav
Department Of Semiconductor Physics Faculty Of Physics University Of Sofia
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Furusho Tomoaki
Department Of Electronics And Information Science Faculty Of Engineering Kyoto Institute Of Technolo
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