Adsorption and Desorption of AlCl3 on Si(111)$7\times 7$ Observed by Scanning Tunneling Microscopy and Atomic Force Microscopy
スポンサーリンク
概要
- 論文の詳細を見る
The initial stage of the reaction of aluminum chloride (AlCl3) with the Si(111)-($7\times 7$) surface is investigated using a scanning tunneling microscope (STM) and an atomic force microscope (AFM). Reacted and unreacted sites are manifested in the contrast of adatom sites on the AlCl3-exposed surface. AlCl3 molecules dissociatively adsorb onto the Si(111)-($7\times 7$) surface at room temperature. The preferential adsorption site is found to be the center-adatom site. Thermal annealing at 1200°C results not only in anisotropic etching of the Si surface but also in the deposition of Al.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1993-12-20
著者
-
Yao Takafumi
Department Of Electrical Engineering Hiroshima University
-
IZAWA Michiyoshi
Department of Electric Engineering, Hiroshima University
-
TAKIGUCHI Takaharu
Department of Electrical Engineering, Hiroshima University
-
Yoshimura Masamichi
Department Of Applied Physics The University Of Tokyo:(present Address) Department Of Electrical Eng
-
Uesugi Katsuhiro
Department Of Electrical Engineering Hiroshima University
-
Uesugi Katsuhiro
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724
関連論文
- Optical Properties of Manganese-Doped ZnSe/ZnS Quantum Dots Grown by Molecular Beam Epitaxy
- Scanning Tunneling Microscopy Observation of Ar-Ion-Bombarded Si(001) Surfaces and Regrowth Processes by Thermal Annealing
- Electronic Structure of the Organic Superconductor k-(BEDT-TTF)_2Cu(NCS)_2 Studied by Angle-Resolved Photoemission Spectroscopy
- Nanometer-Scale Deposition of Ga on INF-Treated Si(111) Surfaces throughthe Decomposition of Triethylgallium by Scanning Tunneling Microscopy
- Intermittent Automodulation Observed in Fe-3% Si Reeds
- Resonance Curves Obtained in the Vibration of Fe-3% Si Reeds
- Scanning Capacitace Microscope/Atomic Force Microscope/Scanning Tunneling Microscope Study of Ion-Implanted Silicon Surfaces
- Adsorption and Desorption of AlCl_3 on Si(111)7×7 Observed by Scanning Tunneling Microscopy and Atomic Force Microscopy
- Characterization of HF-treated Si(111) Surfaces
- Characterization of HF-Treated Si Surfaces by Photoluminescence Spectroscopy
- Extremely Low-Resistivity High-Electron-Concentration ZnSe Grown by Means of Selective Doping Method
- n-Channel Organic Thin-Film Transistors based on Naphthalene--Bis(dicarboximide) Polymer for Organic Transistor Memory Using Hole-Acceptor Layer
- Ion Beam Analysis of ZnSe
- Adsorption and Desorption of AlCl3 on Si(111)$7\times 7$ Observed by Scanning Tunneling Microscopy and Atomic Force Microscopy