Study of Oxygen-Doped GeSbTe Film and Its Effect as an Interface Layer on the Recording Properties in the Blue Wavelength
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概要
- 論文の詳細を見る
An oxygen-doped GeSbTe interface layer improves the overwriting characteristics of the phase-change optical disk in the blue wavelength. The thermal and optical properties of oxygen-doped GeSbTe film and its crystal structure were investigated. Crystallization temperature and activation energy of the amorphous Ge–Sb–Te–O films are increased with the oxygen concentration while the melting point is decreased. The refractive index of the crystalline state monotonically increases with the oxygen concentration of the film, while its extinction coefficient monotonically decreases. In terms of the crystalline structure, fcc characteristic peaks disappear gradually with oxygen concentration, and above 35 at.% of oxygen, hexagonal peaks appear.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-03-30
著者
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Jeong Tae
Devices & Materials Laboratory Lg Electronics Institute Of Technology
-
Seo Hun
Devices & Materials Research Lab., LG Corporate Institute of Technology
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LEE Kwang
Devices and Materials Laboratory, LG Electronics Institute of Technology
-
CHOI Sung
Devices and Materials Laboratory, LG Electronics Institute of Technology
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KIM Sang
Department of Anesthesiology and Pain Medicine, Chosun University Medical School
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Kim Sang
Department of Molecular Science & Technology, Ajou University, Suwon 442-749, Korea
-
Seo Hun
Devices and Materials Laboratory, LG Electronics Institute of Technology, 16 Woomyeon-Dong, Seocho-Gu, Seoul 137-724, Korea
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Choi Sung
Devices and Materials Laboratory, LG Electronics Institute of Technology, 16 Woomyeon-Dong, Seocho-Gu, Seoul 137-724, Korea
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KIM Sang
Department of Agricultural Biotechnology, Seoul National University
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